Boron nitride crucibles are mostly produced from high-purity boron nitride ceramics (BN99, BN997) with the lowest impurity content. Boron nitride crucibles have the advantages of low wettability, chemical stability, high-temperature stability, and good thermal conductivity when used for sintering aluminum nitride (AlN) and silicon nitride (Si3N4) substrates. These advantages provide a reliable, clean, and high-quality sintering environment, ensuring that the substrates are sintered under optimal conditions and maintain the required properties.
Main Performance
High-temperature stability: The maximum sintering temperature of AlN substrates is around 2000°C, and the maximum sintering temperature of Si3N4 substrates is around 1850°C. Both processes involve thermal shocks in different temperature ranges. Boron nitride crucibles can withstand high temperatures up to 2100°C and exhibit similar thermal expansion coefficients to AlN and Si3N4, ensuring stability under high-temperature conditions.
Low wettability: BN ceramics have low wettability, which means that the molten material is unlikely to spread widely on its surface, but tends to form small spheres. This reduces the contact area between the substrate material and the boron nitride crucible during the sintering process, minimizing adhesion and difficulty in removing the sintered substrate from the crucible.
Chemical stability: BN ceramics have high chemical stability and will not react or contaminate many materials. When sintering AlN and Si3N4 substrates, the use of BN crucibles allows direct contact with the substrate material without introducing impurities or changing the composition and properties of the substrate.
Good thermal conductivity: BN crucibles have high thermal conductivity, which facilitates efficient heat transfer. This helps achieve uniform heating and temperature distribution during the sintering process, thereby improving the uniformity and quality of the sintering. It also helps achieve uniformity in substrate density, structure, composition, and dimensional shape, thereby improving the electrical performance, durability, and precise dimensions of AlN and Si3N4 substrates.
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